• DocumentCode
    603507
  • Title

    Highly Reliable Non-Volatile Logic Circuit Technology and Its Application

  • Author

    Kimura, Hiromitsu ; Zhong, Z. ; Mizuochi, Y. ; Kinouchi, N. ; Ichida, Y. ; Fujimori, Yoshikazu

  • Author_Institution
    ROHM Co., Ltd., Kyoto, Japan
  • fYear
    2013
  • fDate
    22-24 May 2013
  • Firstpage
    212
  • Lastpage
    218
  • Abstract
    A ferroelectric-based (FE-based) non-volatile logic is proposed for low-power LSI. Standby currents in a logic circuit can be cut off by using FE-based non-volatile flip-flops(NVFFs), and the standby power can be reduced to zero. The FE capacitor is accessed only when the power turns on/off, performance of the NVFF is almost as same as that of the conventional flip-flop in a logic operation. The use of complementarily stored data in coupled FE capacitors makes it possible to realize wide read voltage margin, which guarantees 10 years retention at 85 degree Celsius under less than 1.5V operation. The low supply voltage and electro-static discharge (ESD) detection technique prevents data destruction caused by illegal access for the FE capacitor during standby state. Applying the proposed circuitry in CPU, the write and read operation for all FE capacitors in 1.6k-bit NVFFs are performed within 7us and 3us with access energy of 23.1nJ and 8.1nJ, respectively, using 130nm CMOS with Pb(Zr, Ti)O3(PZT) thin films.
  • Keywords
    CMOS logic circuits; electric sensing devices; electrostatic discharge; ferroelectric capacitors; ferroelectric storage; ferroelectric thin films; flip-flops; integrated circuit reliability; large scale integration; lead compounds; low-power electronics; thin film capacitors; thin film sensors; CMOS technology; CPU; ESD; Pb(Zr-Ti)O3; circuit reliability; coupled FE capacitor; data storage; electrostatic discharge detection technique; energy 23.1 nJ; energy 8.1 nJ; ferroelectric-based nonvolatile logic circuit technology; flip-flop; low supply voltage; low-power LSI; size 130 nm; storage capacity 1.6 Kbit; temperature 85 degC; thin film; time 10 year; time 3 mus; time 7 mus; write-read operation; Capacitors; Clocks; Integrated circuits; Iron; Logic circuits; Power supplies; Voltage control; Data protection; Ferroelectric capacitor; High reliability; Non-volatile flip-flop; Non-volatile logic;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Multiple-Valued Logic (ISMVL), 2013 IEEE 43rd International Symposium on
  • Conference_Location
    Toyama
  • ISSN
    0195-623X
  • Print_ISBN
    978-1-4673-6067-8
  • Electronic_ISBN
    0195-623X
  • Type

    conf

  • DOI
    10.1109/ISMVL.2013.32
  • Filename
    6524666