DocumentCode
603507
Title
Highly Reliable Non-Volatile Logic Circuit Technology and Its Application
Author
Kimura, Hiromitsu ; Zhong, Z. ; Mizuochi, Y. ; Kinouchi, N. ; Ichida, Y. ; Fujimori, Yoshikazu
Author_Institution
ROHM Co., Ltd., Kyoto, Japan
fYear
2013
fDate
22-24 May 2013
Firstpage
212
Lastpage
218
Abstract
A ferroelectric-based (FE-based) non-volatile logic is proposed for low-power LSI. Standby currents in a logic circuit can be cut off by using FE-based non-volatile flip-flops(NVFFs), and the standby power can be reduced to zero. The FE capacitor is accessed only when the power turns on/off, performance of the NVFF is almost as same as that of the conventional flip-flop in a logic operation. The use of complementarily stored data in coupled FE capacitors makes it possible to realize wide read voltage margin, which guarantees 10 years retention at 85 degree Celsius under less than 1.5V operation. The low supply voltage and electro-static discharge (ESD) detection technique prevents data destruction caused by illegal access for the FE capacitor during standby state. Applying the proposed circuitry in CPU, the write and read operation for all FE capacitors in 1.6k-bit NVFFs are performed within 7us and 3us with access energy of 23.1nJ and 8.1nJ, respectively, using 130nm CMOS with Pb(Zr, Ti)O3(PZT) thin films.
Keywords
CMOS logic circuits; electric sensing devices; electrostatic discharge; ferroelectric capacitors; ferroelectric storage; ferroelectric thin films; flip-flops; integrated circuit reliability; large scale integration; lead compounds; low-power electronics; thin film capacitors; thin film sensors; CMOS technology; CPU; ESD; Pb(Zr-Ti)O3; circuit reliability; coupled FE capacitor; data storage; electrostatic discharge detection technique; energy 23.1 nJ; energy 8.1 nJ; ferroelectric-based nonvolatile logic circuit technology; flip-flop; low supply voltage; low-power LSI; size 130 nm; storage capacity 1.6 Kbit; temperature 85 degC; thin film; time 10 year; time 3 mus; time 7 mus; write-read operation; Capacitors; Clocks; Integrated circuits; Iron; Logic circuits; Power supplies; Voltage control; Data protection; Ferroelectric capacitor; High reliability; Non-volatile flip-flop; Non-volatile logic;
fLanguage
English
Publisher
ieee
Conference_Titel
Multiple-Valued Logic (ISMVL), 2013 IEEE 43rd International Symposium on
Conference_Location
Toyama
ISSN
0195-623X
Print_ISBN
978-1-4673-6067-8
Electronic_ISBN
0195-623X
Type
conf
DOI
10.1109/ISMVL.2013.32
Filename
6524666
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