• DocumentCode
    60366
  • Title

    Photogenerated Current By Two-Step Photon Excitation in ZnTeO Intermediate Band Solar Cells with n-ZnO Window Layer

  • Author

    Tanaka, T. ; Miyabara, Masaki ; Nagao, Yuhei ; Saito, Kazuyuki ; Qixin Guo ; Nishio, Masatoshi ; Kin Man Yu ; Walukiewicz, W.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Saga Univ., Saga, Japan
  • Volume
    4
  • Issue
    1
  • fYear
    2014
  • fDate
    Jan. 2014
  • Firstpage
    196
  • Lastpage
    201
  • Abstract
    We present the results of systematic experimental studies on ZnTeO intermediate band solar cells (IBSCs) with a n-ZnO window layer. In order to understand photovoltaic (PV) activities of ZnTeO IBSCs, we first describe PV properties of ZnO/ZnTe solar cells without the intermediate band (IB). The improved efficiency of 1.38% is demonstrated by using a n+-ZnO/ i-ZnO/ i-ZnTe/ p-ZnTe structure. Then, the PV properties of ZnTeO IBSCs fabricated using n-ZnO window layer with and without a blocking barrier for IB are compared. The device with a blocked IB shows higher open-circuit voltage than that without the blocking barrier. High external quantum efficiency (EQE) is observed in the photon energy range in which electron transitions from the valence band to the IB take place in ZnTeO IBSC without the blocking layer, whereas the device with the blocked IB shows a small EQE at the same energy range, implying the electron accumulation in IB. Finally, the production of photogenerated current by two-step photon excitation via IB is demonstrated.
  • Keywords
    II-VI semiconductors; excited states; photons; solar cells; valence bands; wide band gap semiconductors; zinc compounds; EQE; IBSC; ZnO-ZnO-ZnTe-ZnTe; ZnTeO; blocking barrier; blocking layer; electron accumulation; electron transitions; external quantum efficiency; intermediate band solar cells; n-ZnO window layer; open-circuit voltage; photogenerated current; photovoltaic activities; two-step photon excitation; valence band; Lighting; Photoconductivity; Photonic band gap; Photonics; Photovoltaic cells; Substrates; Zinc oxide; Highly mismatched alloy (HMA); ZnTeO; intermediate band solar cell (IBSC); molecular beam epitaxy (MBE); two-step photon excitation (TPE);
  • fLanguage
    English
  • Journal_Title
    Photovoltaics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    2156-3381
  • Type

    jour

  • DOI
    10.1109/JPHOTOV.2013.2282738
  • Filename
    6642092