A simulation-based study of gate misalignment effects in triple-material double-gate (TMDG) MOSFETs

Author

Sarangi, Saumendra ; Bhushan, Shashi ; Krishna, S.G. ; Santra, Aparna ; Tiwari, P.K.

Author_Institution

Dept. of Electron. & Commun. Eng., NIT Rourkela, Rourkela, India

fYear

2013

fDate

22-23 March 2013

Firstpage

486

Lastpage

489

Abstract

In this work, a simulation based study of gate misalignment effects in triple-material double-gate (TMDG) MOSFETs is presented. An attempt is made to analyze the effects of gate misalignment on the front and back gates surface potential considering the misalignment for both the source and drain side. The surface potential profile for misaligned gate TMDG MOSFET is compared with its double and single material counterparts to predict the electrical parameters like threshold voltage roll-off. The surface potential profile is obtained through 2-D simulations by ATLAS™ from Silvaco Inc.

Keywords

MOSFET; semiconductor device models; surface potential; 2D simulations; ATLAS from Silvaco Inc; TMDG MOSFET; back gates; drain side; front gates; gate misalignment effects; source side; surface potential profile; threshold voltage roll-off; triple-material double-gate MOSFET; Electric potential; Logic gates; MOSFET; Materials; Mathematical model; Numerical models; Threshold voltage; DIBL; Gate Misalignment; Short Channel Effects; TMDG;

fLanguage

English

Publisher

ieee

Conference_Titel

Automation, Computing, Communication, Control and Compressed Sensing (iMac4s), 2013 International Multi-Conference on

Conference_Location

Kottayam

Print_ISBN

978-1-4673-5089-1

Type

conf

DOI

10.1109/iMac4s.2013.6526461

Filename

6526461