Title :
Analysis of drain current in short channel drain-extended triple gate FinFETs
Author :
Soman, Sumit ; Nirmal, D. ; Nair, P.P. ; Ramya, M.S.A. ; Jeba, I.K.
Author_Institution :
Dept. of Electron. & Commun. Eng., Karunya Univ., Coimbatore, India
Abstract :
A short channel drain-extended triple gate fin shaped field effect transistor (finFET) is designed and simulated and its various performance parameters has been analyzed using Sentaurus TCAD tools. Drain-extended triple gate finFET has better hot carrier reliability which results in increased ON current and suppressed OFF current. The maximum ON current of the proposed device is found to be 2.37×10-5 A/μm at VGS =0.4 V and maximum OFF current is found to be 1.108×10-11 A/μm and hence an excellent ON/OFF ratio is achieved.
Keywords :
MOSFET; semiconductor device reliability; technology CAD (electronics); Sentaurus TCAD tools; drain current analysis; hot carrier reliability; increased ON current; short channel drain- extended triple gate FinFET; short channel drain-extended triple gate fin shaped field effect transistor; suppressed OFF current; voltage 0.4 V; FinFETs; Leakage currents; Logic gates; Performance evaluation; Substrates; Threshold voltage; ON/OFF ratio; Triple gate (TG) finFET; drain current; drain-extended triple gate finFET; high-k dielectric; hot carrier reliability; short channel effect;
Conference_Titel :
Automation, Computing, Communication, Control and Compressed Sensing (iMac4s), 2013 International Multi-Conference on
Conference_Location :
Kottayam
Print_ISBN :
978-1-4673-5089-1
DOI :
10.1109/iMac4s.2013.6526463
