DocumentCode :
604740
Title :
Design of a Static Current Simulator Using Device Matrix Approach
Author :
Bharti, Deepshikha ; Asati, Abhijit R.
Author_Institution :
Center of Excellence in ICT, Indian Inst. of Technol. Rajasthan, Jodhpur, India
fYear :
2012
fDate :
19-22 Dec. 2012
Firstpage :
193
Lastpage :
197
Abstract :
I-V characteristic is one of the important results produced by a device simulator. In this article, a novel and interactive matrix based algorithm is presented to draw the device structure in 2-D or 3-D style and to plot the I-V characteristic of the device for user specified doping and biasing conditions. Algorithm creates 2-D or 3-D matrix of the device from device description mentioned by the user. This device matrix undergoes many different operations, and various mathematical computations are performed, using which I-V characteristic is plotted. This approach gives a novel idea of basic device level tool development. The students and device level engineers can find this work useful which offers them an interactive and instant way to draw I-V characteristics of the device. The algorithm implementation is modular and matrix based, which is done using MATLAB®.
Keywords :
MOSFET; bipolar transistors; integrated circuit testing; mathematics computing; matrix algebra; 2-D style; 3-D style; I-V characteristic; Matlab; device level engineers; device matrix approach; interactive matrix based algorithm; mathematical computations; static current simulator; I-V characteristics; MATLAB®; algorithm; device matrix; device simulator;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic System Design (ISED), 2012 International Symposium on
Conference_Location :
Kolkata
Print_ISBN :
978-1-4673-4704-4
Type :
conf
DOI :
10.1109/ISED.2012.38
Filename :
6526582
Link To Document :
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