• DocumentCode
    604740
  • Title

    Design of a Static Current Simulator Using Device Matrix Approach

  • Author

    Bharti, Deepshikha ; Asati, Abhijit R.

  • Author_Institution
    Center of Excellence in ICT, Indian Inst. of Technol. Rajasthan, Jodhpur, India
  • fYear
    2012
  • fDate
    19-22 Dec. 2012
  • Firstpage
    193
  • Lastpage
    197
  • Abstract
    I-V characteristic is one of the important results produced by a device simulator. In this article, a novel and interactive matrix based algorithm is presented to draw the device structure in 2-D or 3-D style and to plot the I-V characteristic of the device for user specified doping and biasing conditions. Algorithm creates 2-D or 3-D matrix of the device from device description mentioned by the user. This device matrix undergoes many different operations, and various mathematical computations are performed, using which I-V characteristic is plotted. This approach gives a novel idea of basic device level tool development. The students and device level engineers can find this work useful which offers them an interactive and instant way to draw I-V characteristics of the device. The algorithm implementation is modular and matrix based, which is done using MATLAB®.
  • Keywords
    MOSFET; bipolar transistors; integrated circuit testing; mathematics computing; matrix algebra; 2-D style; 3-D style; I-V characteristic; Matlab; device level engineers; device matrix approach; interactive matrix based algorithm; mathematical computations; static current simulator; I-V characteristics; MATLAB®; algorithm; device matrix; device simulator;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic System Design (ISED), 2012 International Symposium on
  • Conference_Location
    Kolkata
  • Print_ISBN
    978-1-4673-4704-4
  • Type

    conf

  • DOI
    10.1109/ISED.2012.38
  • Filename
    6526582