Title :
Analysis of Top and Bottom Contact Organic Transistor Performance for Different Technology Nodes
Author :
Mittal, Payal ; Negi, Yuvraj Singh ; Singh, R.K.
Author_Institution :
Graphic Era Univ., Dehradun, India
Abstract :
This research paper analyzes the performance of organic thin film transistor (OTFT) for two typical structures, viz., bottom gate top contact (BGTC) and bottom gate bottom contact (BGBC). The analysis is carried out for channel length (L) from 5 to 50 μm. A significant reduction in drain current for top contact is observed, however, it remains constant for the bottom contact device. Transconductance of the top contact device falls about 50% from 5 to 10 μm L, however, for bottom contact only 1% reduction is observed. Besides this, mobility in top contact is almost constant, whereas in bottom contact, mobility increases with larger channel lengths. Furthermore, total resistance decreases with higher gate bias, due to increase in carrier density within a channel and near contacts for both devices.
Keywords :
electrical contacts; thin film transistors; BGBC; BGTC; OTFT; bottom gate bottom contact; bottom gate top contact; carrier density; channel contact; channel length; drain current; near contact; organic thin film transistor; size 5 mum to 50 mum; Channel length; Contact resistance; Mobility; OTFT;
Conference_Titel :
Electronic System Design (ISED), 2012 International Symposium on
Conference_Location :
Kolkata
Print_ISBN :
978-1-4673-4704-4
DOI :
10.1109/ISED.2012.60