DocumentCode :
604847
Title :
A detailed IC package numerical model calibration methodology
Author :
Bornoff, R. ; Vass-Varnai, Andras
Author_Institution :
Mech. Anal. Div., Mentor Graphics, Richmond upon Thames, UK
fYear :
2013
fDate :
17-21 March 2013
Firstpage :
65
Lastpage :
70
Abstract :
Experimentally derived structure functions can be used to provide insights into the thermal resistances and capacitances heat experiences as it travels from a die through and beyond an IC package. A 3D “detailed” numerical model of the package that purports to explicitly represent the internal construction of the package requires material properties and geometric sizes to be accurately specified. A structure function derived from simulating the detailed numerical model can itself be compared to the experimentally derived reference example. Deviations between experimental and numerical SFs indicate error sites within the detailed model and an indication of whether the thermal resistances or thermal capacitances of the numerical would need to be increased or decreased to match the experimentally observed values. Iterative modifications of the detailed model, based on successive structure function comparisons, will achieve a fully calibrated detailed numerical package model.
Keywords :
calibration; integrated circuit packaging; iterative methods; IC package numerical model calibration methodology; capacitances heat experiences; die; iterative modifications; material properties; numerical package model; thermal capacitances; thermal resistances; Calibration; Capacitance; Microassembly; Numerical models; Temperature measurement; Thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM), 2013 29th Annual IEEE
Conference_Location :
San Jose, CA
ISSN :
1065-2221
Print_ISBN :
978-1-4673-6427-0
Electronic_ISBN :
1065-2221
Type :
conf
DOI :
10.1109/SEMI-THERM.2013.6526807
Filename :
6526807
Link To Document :
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