DocumentCode :
604856
Title :
Thermal simulation of integrated circuits based on a reduced-order model
Author :
Cheng, Ming-C ; Helenbrook, Brian T. ; Venters, R. ; Kun Zhang
Author_Institution :
Dept. of Electr. & Comput. Eng., Clarkson Univ., Potsdam, NY, USA
fYear :
2013
fDate :
17-21 March 2013
Firstpage :
124
Lastpage :
129
Abstract :
A reduced-order thermal model (ROM) for integrated circuits (ICs) is developed based on proper orthogonal decomposition (POD). The developed approach requires no assumptions about the physical geometry, dimensions, or heat flow paths for any complex geometries and is able to offer detailed thermal information at a computational cost comparable to that of compact thermal models. To demonstrate its capability, the model is applied to a 2D SOI IC structure subjected to steady and dynamic heat sources. A reduction of several orders of magnitude in numerical degrees of freedom (DOF) can be achieved when using the ROM model to capture the device junction temperature, compared to detailed numerical simulation. It has been shown that steady-state and dynamic results between these 2 approaches are nearly identical.
Keywords :
integrated circuit modelling; reduced order systems; silicon-on-insulator; thermal analysis; 2D SOI IC structure; POD; ROM; computational cost; device junction temperature; dynamic compact thermal model; heat flow paths; integrated circuits; proper orthogonal decomposition; reduced order thermal model; silicon-on-insulator; steady state thermal model; thermal information; thermal simulation; Computational modeling; Eigenvalues and eigenfunctions; Integrated circuit modeling; Junctions; Mathematical model; Power dissipation; Read only memory; Reduced-order thermal model; integrated circuits; proper orthogonal decomposition (POD);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM), 2013 29th Annual IEEE
Conference_Location :
San Jose, CA
ISSN :
1065-2221
Print_ISBN :
978-1-4673-6427-0
Electronic_ISBN :
1065-2221
Type :
conf
DOI :
10.1109/SEMI-THERM.2013.6526816
Filename :
6526816
Link To Document :
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