Title :
Single Event Hard Errors in SRAM Under Heavy Ion Irradiation
Author :
Haran, Avner ; Barak, Joseph ; David, David ; Keren, Eitan ; Refaeli, Nati ; Rapaport, Shimshon
Author_Institution :
Soreq NRC, Yavne, Israel
Abstract :
Single-event Hard Errors (SHEs) due to heavy ion irradiation were detected in a SRAM and their cross section was measured. Possible mechanisms for SHE are discussed. The results indicate that SHE in SRAMs is correlated with two processes: microdose effect and formation of a conductive path through the gate oxide. The annealing of SHE is also investigated and discussed.
Keywords :
SRAM chips; ion beam effects; SRAM; gate oxide; heavy ion irradiation; microdose effect; single-event hard errors; static random-access memories; Annealing; Ions; Logic gates; Radiation effects; SDRAM; Transistors; Angular dependence; charge yield; microdose; radiation induced leakage current (RILC); single-event hard error (SHE); soft breakdown (SBD); stuck bits;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2014.2345697
