Title :
Influence of power semiconductor on-voltage on iron loss of inverter-fed
Author :
Kyamoari, D. ; FUJISAKI, Keisuke
Author_Institution :
Electromagn. Energy Syst. Lab., Toyota Technol. Inst., Nagoya, Japan
Abstract :
The influence of power semiconductor on-voltage on iron loss of inverter-fed electrical steels is made clear through the experimental data. One-phase full bridge inverter is used for an iron loss evaluation, where Bipolar transistor, MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) and IGBT (Insulated Gate Bipolar Transistor) are selected as power semiconductors in an inverter circuit. When maximum magnetic flux density is adjusted to be 1 [T] in the electrical steel, the measured iron loss is different from the three kinds of power semiconductors.
Keywords :
bridge circuits; insulated gate bipolar transistors; invertors; iron; iron alloys; losses; power MOSFET; power bipolar transistors; power semiconductor devices; silicon alloys; FeSi; IGBT; MOSFET; bipolar transistor; electrical steel; insulated gate bipolar transistor; inverter circuit; inverter-fed electrical steels; iron loss evaluation; iron loss measurement; maximum magnetic flux density; metal-oxide-semiconductor field-effect transistor; one-phase full bridge inverter; power semiconductor on-voltage; Insulated gate bipolar transistors; Inverters; Iron; Magnetic flux density; Magnetic hysteresis; Semiconductor device measurement; Steel;
Conference_Titel :
Power Electronics and Drive Systems (PEDS), 2013 IEEE 10th International Conference on
Conference_Location :
Kitakyushu
Print_ISBN :
978-1-4673-1790-0
Electronic_ISBN :
2164-5256
DOI :
10.1109/PEDS.2013.6527134
