Influence of power semiconductor on-voltage on iron loss of inverter-fed

Author

Kyamoari, D. ; FUJISAKI, Keisuke

Author_Institution

Electromagn. Energy Syst. Lab., Toyota Technol. Inst., Nagoya, Japan

fYear

2013

fDate

22-25 April 2013

Firstpage

840

Lastpage

845

Abstract

The influence of power semiconductor on-voltage on iron loss of inverter-fed electrical steels is made clear through the experimental data. One-phase full bridge inverter is used for an iron loss evaluation, where Bipolar transistor, MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) and IGBT (Insulated Gate Bipolar Transistor) are selected as power semiconductors in an inverter circuit. When maximum magnetic flux density is adjusted to be 1 [T] in the electrical steel, the measured iron loss is different from the three kinds of power semiconductors.

Keywords

bridge circuits; insulated gate bipolar transistors; invertors; iron; iron alloys; losses; power MOSFET; power bipolar transistors; power semiconductor devices; silicon alloys; FeSi; IGBT; MOSFET; bipolar transistor; electrical steel; insulated gate bipolar transistor; inverter circuit; inverter-fed electrical steels; iron loss evaluation; iron loss measurement; maximum magnetic flux density; metal-oxide-semiconductor field-effect transistor; one-phase full bridge inverter; power semiconductor on-voltage; Insulated gate bipolar transistors; Inverters; Iron; Magnetic flux density; Magnetic hysteresis; Semiconductor device measurement; Steel;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Drive Systems (PEDS), 2013 IEEE 10th International Conference on

Conference_Location

Kitakyushu

ISSN

2164-5256

Print_ISBN

978-1-4673-1790-0

Electronic_ISBN

2164-5256

Type

conf

DOI

10.1109/PEDS.2013.6527134

Filename

6527134