Title :
Fabrication and evaluation of SiC inverter using SiC-MOSFET
Author :
Yamane, Akinari ; Koyanagi, K. ; Kozako, Masahiro ; Fuji, K. ; Hikita, Masayuki
Author_Institution :
Dept. of Electr. Eng., Kyushu Inst. of Technol., Kitakyushu, Japan
Abstract :
This paper deals with device characteristics of SiC-MOSFET (600 V, 10 A) and efficiency characteristics of SiC inverter when the motor is driven as compared respectively with Si-MOSFET and Si inverter. As a result, it was found that on-resistance of SiC-MOSFET is smaller than that of Si-MOSFET, and switching loss of SiC-MOSEFET is approximately 1/3 compared with Si-MOSFET. It was also found that the SiC inverter is operated at high efficiency about 7.3% than the Si inverter at the switching frequency of 100 kHz.
Keywords :
elemental semiconductors; invertors; power MOSFET; silicon; silicon compounds; wide band gap semiconductors; MOSFET; Si; SiC; current 10 A; device characteristics; frequency 100 kHz; inverter; switching loss; voltage 600 V; Current measurement; Inverters; Logic gates; MOSFET; Silicon; Silicon carbide; Switching loss;
Conference_Titel :
Power Electronics and Drive Systems (PEDS), 2013 IEEE 10th International Conference on
Conference_Location :
Kitakyushu
Print_ISBN :
978-1-4673-1790-0
Electronic_ISBN :
2164-5256
DOI :
10.1109/PEDS.2013.6527171
