DocumentCode
605082
Title
Fabrication and evaluation of SiC inverter using SiC-MOSFET
Author
Yamane, Akinari ; Koyanagi, K. ; Kozako, Masahiro ; Fuji, K. ; Hikita, Masayuki
Author_Institution
Dept. of Electr. Eng., Kyushu Inst. of Technol., Kitakyushu, Japan
fYear
2013
fDate
22-25 April 2013
Firstpage
1029
Lastpage
1032
Abstract
This paper deals with device characteristics of SiC-MOSFET (600 V, 10 A) and efficiency characteristics of SiC inverter when the motor is driven as compared respectively with Si-MOSFET and Si inverter. As a result, it was found that on-resistance of SiC-MOSFET is smaller than that of Si-MOSFET, and switching loss of SiC-MOSEFET is approximately 1/3 compared with Si-MOSFET. It was also found that the SiC inverter is operated at high efficiency about 7.3% than the Si inverter at the switching frequency of 100 kHz.
Keywords
elemental semiconductors; invertors; power MOSFET; silicon; silicon compounds; wide band gap semiconductors; MOSFET; Si; SiC; current 10 A; device characteristics; frequency 100 kHz; inverter; switching loss; voltage 600 V; Current measurement; Inverters; Logic gates; MOSFET; Silicon; Silicon carbide; Switching loss;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Drive Systems (PEDS), 2013 IEEE 10th International Conference on
Conference_Location
Kitakyushu
ISSN
2164-5256
Print_ISBN
978-1-4673-1790-0
Electronic_ISBN
2164-5256
Type
conf
DOI
10.1109/PEDS.2013.6527171
Filename
6527171
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