Title :
High Power LED Thermal and Stress Simulation on Copper Slug
Author :
Vairavan, Rajendaran ; Sauli, Zaliman ; Retnasamy, Vithyacharan ; Ismail, R.C. ; Nor, N.I.M. ; Nadzri, N.S. ; Kamarudin, H.
Author_Institution :
Sch. of Microelectron. Eng., Univ. Malaysia Perlis (UniMAP), Arau, Malaysia
Abstract :
High power LED are captivating attention due to its cogent impacts on lighting industry in terms of efficacy, low power consumption, long lifetime and miniature physical size. Nonetheless, the efficiency and reliability of the LED is signified by the junction temperature. This work demonstrates the thermal and stress simulation of single chip LED package with 1mm x1mm x 1mm copper heat slug. The simulation was performed using Ansys version 11. The GaN LED chip was powered with input power of 0.1 W and 1 W. The simulation outcome exhibited that at the maximum junction temperature and stress of the LED chip were 115.81°C and 221.56MPa correspondingly for input power of 1W.
Keywords :
III-V semiconductors; copper; electronics packaging; gallium compounds; light emitting diodes; semiconductor device reliability; wide band gap semiconductors; Ansys version 11; Cu; GaN; GaN LED chip; cogent impacts; copper slug; high power LED; junction temperature; lighting industry; low power consumption; reliability; single chip LED package; stress simulation; thermal simulation; Heat sinks; Heating; Junctions; Light emitting diodes; Materials; Stress; Three-dimensional displays; single GaN chip LED;copper heat slug; junction temperature; ansys;
Conference_Titel :
Computer Modelling and Simulation (UKSim), 2013 UKSim 15th International Conference on
Conference_Location :
Cambridge
Print_ISBN :
978-1-4673-6421-8
DOI :
10.1109/UKSim.2013.150