Simulation of Trigate FET with Semi-Cylindrical Channel to Reduce Corner Effect

Trigate Field Effect Transistor (FET) is one of the promising devices to overcome MOSFET scaling. However, major problems arised due to edge of the corner which introduced a high leakage current as well as reliability issues. In this work, we have introduced a method to reduce these issues by incorporating a semi-cylindrical channel through simulation. Based on simulated results, it was found that this method can minimize the leakage current. In addition, this structure makes the device less sensitive to temperature effect and more robust. Besides, radius variation can be used to reduce leakage current even smaller. It was found that the maximum drive current of this device is higher compared to reported silicon nanowire trigate MOSFET.