Low noise high frequency CNTFET amplifier

Author

Makni, W. ; Barrage, I. ; Samet, Haidar ; Masmoudi, Malek ; Najari, M.

Author_Institution

Nat. Sch. of Eng. of Sfax, Lab. of Micro-Electro Thermal Syst. (METS), Sfax, Tunisia

fYear

2013

fDate

26-28 March 2013

Firstpage

45

Lastpage

49

Abstract

This paper focuses on performance challenges related to Mos-based systems operating on high frequency ranges. One solution for this issue is to use carbon nanotube transistor (CNTFET) because of their promising performances. Therefore, to improve the device performance at high frequency ranges, designers must reduce the parasitic capacitances by using an array of parallel nanotubes as the transistor channel. This work presents the simulation of low noise amplifier using CNTFET technology. At 165GHz, the LNA simulation results show a power gain of 16dB, a noise figure of 0.25dB and very low power consumption equal to 0.47mW.

Keywords

capacitance; carbon nanotube field effect transistors; low noise amplifiers; millimetre wave amplifiers; tunnel transistors; LNA simulation; Mos-based systems; carbon nanotube transistor; frequency 165 GHz; high frequency ranges; low noise high frequency CNTFET amplifier; parallel nanotubes array; parasitic capacitances; power gain; transistor channel; very low power consumption; Decision support systems; Diffusion tensor imaging; Nanoscale devices; CNTFET; LNA; gain; high frequency; noise figure; power consumption;

fLanguage

English

Publisher

ieee

Conference_Titel

Design & Technology of Integrated Systems in Nanoscale Era (DTIS), 2013 8th International Conference on

Conference_Location

Abu Dhabi

Print_ISBN

978-1-4673-6039-5

Electronic_ISBN

978-1-4673-6038-8

Type

conf

DOI

10.1109/DTIS.2013.6527776

Filename

6527776