Title :
Design of an ultra-low power 32-bit adder operating at subthreshold voltages in 45-nm FinFET
Author :
Jafari, Mohsen ; Imani, Maryam ; Ansari, Md ; Fathipour, Morteza ; Sehatbakhsh, N.
Author_Institution :
Sch. of Electr. & Comput., Univ. of Tehran, Tehran, Iran
Abstract :
This paper describes the design of an ultimately low power subthreshold 32-bit adder, implemented in 45-nm technology. Low power design is achieved by using FinFET devices which are nowadays a basic component of very scaled and low power circuits. The circuit was tested in all corners and its consumption is as low as 10fJ per computation with 0.4V supply voltage and maximum operating frequency about 260KHz. A very alluring feature of this design is that it could be speed up to 256MHz in 1.13V supply voltage and consuming only 59.05fJ energy per calculation. Another appealing feature of propose design is its stable and reliable operation with 130mV supply voltage by 3.74 KHz operation frequency. In this mode the design consumes only 43.77fW. This multi-mode design could be used in integrated circuit design which uses power management technique to reduce energy consumption by OS software job assignment. The simulations were done by HSPISE 2008.all model are extracted from FinFET 45nm PTM library.
Keywords :
MOSFET; adders; electronic engineering computing; logic design; FinFET devices; HSPISE 2008.all model; OS software job assignment; PTM library; frequency 3.74 kHz; integrated circuit design; low power circuits; power 43.77 fW; size 45 nm; subthreshold voltages; supply voltage; ultralow power adder design; voltage 0.4 V; voltage 1.13 V; voltage 130 mV; word length 32 bit; Adders; FinFETs; Integrated circuit modeling; Low-power electronics; Power demand; Power measurement; Voltage measurement; Adder; FinFET; Minimum Energy Point; Sub threshold;
Conference_Titel :
Design & Technology of Integrated Systems in Nanoscale Era (DTIS), 2013 8th International Conference on
Conference_Location :
Abu Dhabi
Print_ISBN :
978-1-4673-6039-5
Electronic_ISBN :
978-1-4673-6038-8
DOI :
10.1109/DTIS.2013.6527799