Compact modeling and applications of Carbon nanotube field effect transistors CNTFETs based CMOS-like complementary NOR, OR, NAND, and AND logic gates

Author

I´Msaddak, L. ; Ben Issa, Dalenda ; Kachouri, A.

Author_Institution

Dept. of Electr. Eng., ENIS, Sfax, Tunisia

fYear

2013

fDate

26-28 March 2013

Firstpage

176

Lastpage

177

Abstract

In this paper, CMOS architectures for NOT, AND, OR, NOR and NAND gates were proposed using C-CNTFETs and their operational characteristics were checked using the simulator SPICE. The CNTFETs utilize a semiconducting Carbon nanotube (CNT) channel controlled by isolated electrostatic gates. Circuit-compatible model of conventional CNTFET, which demonstrates p-type or n-type switching behavior depending on the gate voltage, is implemented in SPICE and the designs are extensively simulated in SPICE. The power and delay performance of CNTFETs were investigated in basic logic gates for D_CNT=1.42 nm on this SPICE model.

Keywords

CMOS logic circuits; SPICE; carbon nanotube field effect transistors; logic gates; semiconductor device models; C; C-CNTFET; CMOS-like complementary NAND logic gates; CMOS-like complementary NOR logic gates; SPICE model; SPICE simulator; carbon nanotube field effect transistors; compact modeling; isolated eleetrostatie gates; n-type switching; p-type switching; semiconducting CNT channel; semiconducting carbon nanotube channel; CNTFETs; Capacitance; Carbon nanotubes; Delays; Logic gates; SPICE; Switches; AND2; Carbon nanotube field effect transistors (CNTFET); Compact model; NAND2; NAND3; NOR2; NOR3 gates; NOT; OR2; SPICE;

fLanguage

English

Publisher

ieee

Conference_Titel

Design & Technology of Integrated Systems in Nanoscale Era (DTIS), 2013 8th International Conference on

Conference_Location

Abu Dhabi

Print_ISBN

978-1-4673-6039-5

Electronic_ISBN

978-1-4673-6038-8

Type

conf

DOI

10.1109/DTIS.2013.6527803

Filename

6527803