DocumentCode :
605512
Title :
An integrated CMOS-MEMS probe having two-tips per cantilever for individual contact sensing and kelvin measurement with two cantilevers
Author :
Hosaka, Kazumoto ; Morishita, S. ; Mori, I. ; Kubota, Minoru ; Mita, Y.
Author_Institution :
Sch. of Eng., Univ. of Tokyo, Tokyo, Japan
fYear :
2013
fDate :
25-28 March 2013
Firstpage :
3
Lastpage :
6
Abstract :
The MEMS-made probe cards can drastically improve semiconductor wafer test quality as compared to traditional tungsten probe. To further take advantage of MEMS technology, the authors propose a CMOS-MEMS integrated probe card, to solve the tradeoff problem of measurement precision and excess pad damage by skating, by 4-terminal (Kelvin) measurement with two-tracks-per-cantilever needle. Putting two tips on each cantilever enables us to detect electrical contact and to decrease skating. And by this structure, electrical properties of a device under test are measured precisely with 4-terminal measurement which can eliminate track resistance and contact resistance. We measured the resistance of a gold thin film. With 2-terminal method, the resistance was measured to be about 74 ohms. However with Kelvin measurement, the resistance was 0.012-0.022 ohms. This result shows the successful implementation of 4-terminal measurement probe with MEMS technology.
Keywords :
CMOS integrated circuits; cantilevers; contact resistance; electrical contacts; microsensors; probes; CMOS-MEMS integrated probe card; Kelvin measurement; MEMS technology; MEMS-made probe cards; contact resistance; contact sensing; device under test; electrical contact detection; electrical properties; excess pad damage; four-terminal measurement probe; integrated CMOS-MEMS probe; measurement precision tradeoff problem; resistance 0.012 ohm to 0.022 ohm; semiconductor wafer test quality; structure properties; track resistance elimination; tungsten probe; two-terminal method; two-tips per cantilever; two-tracks-per-cantilever needle; Contacts; Electrical resistance measurement; Kelvin; Micromechanical devices; Probes; Resistance; Semiconductor device measurement; Kelvin measurement; MEMS probe; cantilever; probe card; wafer test;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2013 IEEE International Conference on
Conference_Location :
Osaka, Japan
ISSN :
1071-9032
Print_ISBN :
978-1-4673-4845-4
Electronic_ISBN :
1071-9032
Type :
conf
DOI :
10.1109/ICMTS.2013.6528136
Filename :
6528136
Link To Document :
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