Comparison of C-V measurement methods for RF-MEMS capacitive switches

Author

Jiahui Wang ; Salm, C. ; Schmitz, Jurriaan

Author_Institution

MESA+ Inst. for Nanotechnol., Univ. of Twente, Enschede, Netherlands

fYear

2013

fDate

25-28 March 2013

Firstpage

53

Lastpage

58

Abstract

The applicability of several capacitance-voltage measurement methods is investigated for the on-wafer characterization of RF-MEMS capacitive switches. These devices combine few-picofarad capacitance with a high quality factor. The standard quasistatic and high-frequency measurements are employed, as well as the recently introduced very-low-frequency method. S11 is measured by a network analyzer to calculate the capacitance of the device from radio-frequency measurements. Significant differences are found around the pull-in and pull-out voltages.

Keywords

Q-factor measurement; capacitance measurement; microswitches; network analysers; radiofrequency measurement; voltage measurement; C-V measurement methods; RF-MEMS capacitive switches; capacitance-voltage measurement methods; few-picofarad capacitance; high-frequency measurements; network analyzer; on-wafer characterization; pull-in voltages; pull-out voltages; quality factor; radiofrequency measurements; very-low-frequency method; Capacitance; Capacitance measurement; Capacitance-voltage characteristics; Electrical resistance measurement; Frequency measurement; Radio frequency; Voltage measurement; RF-MEMS switch; capacitance; measurement; parasitics;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures (ICMTS), 2013 IEEE International Conference on

Conference_Location

Osaka, Japan

ISSN

1071-9032

Print_ISBN

978-1-4673-4845-4

Electronic_ISBN

1071-9032

Type

conf

DOI

10.1109/ICMTS.2013.6528145

Filename

6528145