Title :
Comparison of C-V measurement methods for RF-MEMS capacitive switches
Author :
Jiahui Wang ; Salm, C. ; Schmitz, Jurriaan
Author_Institution :
MESA+ Inst. for Nanotechnol., Univ. of Twente, Enschede, Netherlands
Abstract :
The applicability of several capacitance-voltage measurement methods is investigated for the on-wafer characterization of RF-MEMS capacitive switches. These devices combine few-picofarad capacitance with a high quality factor. The standard quasistatic and high-frequency measurements are employed, as well as the recently introduced very-low-frequency method. S11 is measured by a network analyzer to calculate the capacitance of the device from radio-frequency measurements. Significant differences are found around the pull-in and pull-out voltages.
Keywords :
Q-factor measurement; capacitance measurement; microswitches; network analysers; radiofrequency measurement; voltage measurement; C-V measurement methods; RF-MEMS capacitive switches; capacitance-voltage measurement methods; few-picofarad capacitance; high-frequency measurements; network analyzer; on-wafer characterization; pull-in voltages; pull-out voltages; quality factor; radiofrequency measurements; very-low-frequency method; Capacitance; Capacitance measurement; Capacitance-voltage characteristics; Electrical resistance measurement; Frequency measurement; Radio frequency; Voltage measurement; RF-MEMS switch; capacitance; measurement; parasitics;
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2013 IEEE International Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
978-1-4673-4845-4
Electronic_ISBN :
1071-9032
DOI :
10.1109/ICMTS.2013.6528145
