Optical high frequency test structure and test bench definition for on wafer silicon integrated noise source characterization up to 110 GHz based on Germanium-on-Silicon photodiode

Author

Oeuvrard, S. ; Lampin, J. ; Ducournau, Guillaume ; Virot, L. ; Fedeli, J.M. ; Hartmann, J.M. ; Danneville, Frangois ; Morandini, Y. ; Gloria, Daniel

Author_Institution

TR&D/TPS Lab., STMicroelectron., Crolles, France

fYear

2013

fDate

25-28 March 2013

Firstpage

73

Lastpage

76

Abstract

A new Optical-High-Frequency test structure and dedicated test bench have been developed to characterize a Germanium-on-Silicon photodiode intended to be used as an integrated noise source, a first step to high frequency transistor noise figure on-wafer extraction. Continuous wave signals have been measured from these 1550 nm photodiodes, with RF power higher than -20 dBm at 109 GHz.

Keywords

electric noise measurement; photodiodes; continuous wave signals; frequency 109 GHz; germanium-on-silicon photodiode; high frequency transistor; noise figure on-wafer extraction; optical high frequency test structure; size 150 nm; test bench definition; wafer silicon integrated noise source characterization; Noise; Optical coupling; Optical fibers; Photodiodes; Radio frequency; Germanium Photodiode; Noise Measurement; Noise Source; Silicon Photonics; Test Structure;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures (ICMTS), 2013 IEEE International Conference on

Conference_Location

Osaka, Japan

ISSN

1071-9032

Print_ISBN

978-1-4673-4845-4

Electronic_ISBN

1071-9032

Type

conf

DOI

10.1109/ICMTS.2013.6528148

Filename

6528148