DocumentCode :
605527
Title :
Evaluation of 1/f noise variability in the subthreshold region of MOSFETs
Author :
Tuinhout, H. ; Duijnhoven, A.Z.
Author_Institution :
NXP Semicond. - Design Platforms, Eindhoven, Netherlands
fYear :
2013
fDate :
25-28 March 2013
Firstpage :
87
Lastpage :
92
Abstract :
This paper discusses the challenges of characterization of 1/f noise and its variability under weak-inversion operating conditions of MOSFETs. A dedicated test module was designed with a range of MOSFET types with different layout implementations, particularly focusing at the noise behavior of very wide transistors. Through extensive use of a commercial noise characterization system it proved possible to evaluate the variability of 1/f noise in weak-inversion, revealing several interesting and important subtleties of low frequency noise.
Keywords :
1/f noise; MOSFET; electric noise measurement; semiconductor device noise; 1/f noise variability; MOSFET; dedicated test module; low frequency noise; noise behavior; subthreshold region; weak-inversion operating conditions; Logic gates; Low-frequency noise; Noise measurement; Sociology; Statistics; Transistors; 1/f noise; MOSFET; low frequency noise measurements; subthreshold; variability; weak inversion;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2013 IEEE International Conference on
Conference_Location :
Osaka, Japan
ISSN :
1071-9032
Print_ISBN :
978-1-4673-4845-4
Electronic_ISBN :
1071-9032
Type :
conf
DOI :
10.1109/ICMTS.2013.6528151
Filename :
6528151
Link To Document :
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