Title :
Benchmarking of a surface potential based organic thin-film transistor model against C10-DNTT high performance test devices
Author :
Maiti, T.K. ; Hayashi, Teruaki ; Mori, Hisamichi ; Kang, M.J. ; Takimiya, Kazuo ; Miura-Mattausch, M. ; Mattausch, Hans Jurgen
Author_Institution :
HiSIM Res. Center, Hiroshima Univ., Higashi-Hiroshima, Japan
Abstract :
In this paper, a surface potential based compact model for organic thin-film transistors (OTFTs) including both tail and deep trap states across the band gap is presented and benchmarked against measured data from high-performance dinaphtho thieno thiophene (C10-DNTT) based test devices. This model can accurately describe the OTFT test-structure current from week to strong inversion regime.
Keywords :
semiconductor device models; semiconductor device testing; surface potential; thin film transistors; C10-DNTT high performance test devices; deep trap states; high performance dinaphtho thieno thiophene; inversion regime; organic thin film transistor model; surface potential based compact model; Integrated circuit modeling; Logic gates; Mathematical model; Organic semiconductors; Organic thin film transistors; Semiconductor process modeling; Organic Thin-Film Transistors; compact model; surface potential; traps;
Conference_Titel :
Microelectronic Test Structures (ICMTS), 2013 IEEE International Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
978-1-4673-4845-4
Electronic_ISBN :
1071-9032
DOI :
10.1109/ICMTS.2013.6528164
