Impact of device geometry and doping concentration variation on electrical characteristics of 22nm FinFET

Author

Sivasankaran, K. ; Mallick, P.S. ; Chitroju, T.R.K.K.

Author_Institution

Sch. of Electr. Eng., VIT Univ., Vellore, India

fYear

2013

fDate

25-26 March 2013

Firstpage

528

Lastpage

531

Abstract

This paper presents the impact of device physical geometry and doping concentration variation on dc characteristics of 22nm FinFET. The device geometry such as thickness of fin (T_fin) and gate oxide thickness (t_ox) are varied and the performance such as threshold voltage (V_th), subthreshold swing (SS), on current (I_on), off current (I_off) of FinFET are analyzed using TCAD. Also the impact of doping concentration on dc characteristics were studied. The results show that for T_fin of 3nm, t_ox of 1.5nm and fin height (H_fin) of 7nm has higher I_on and lower I_off.

Keywords

MOSFET; semiconductor doping; FinFET; TCAD; dc characteristics; device physical geometry; doping concentration variation; electrical characteristics; gate oxide thickness; size 22 nm; Doping; FinFETs; Logic gates; Performance evaluation; Semiconductor process modeling; Threshold voltage; FinFET; TCAD Simulation; Tri gate; device geometry; doping concentration;

fLanguage

English

Publisher

ieee

Conference_Titel

Emerging Trends in Computing, Communication and Nanotechnology (ICE-CCN), 2013 International Conference on

Conference_Location

Tirunelveli

Print_ISBN

978-1-4673-5037-2

Type

conf

DOI

10.1109/ICE-CCN.2013.6528556

Filename

6528556