Title :
Elaboration and characterization of In2S3 thin films by spray pyrolysis with [S]/ [In] = 3 ratio
Author :
Sall, T. ; Hartiti, B. ; Mari, B. ; Miquel, M. ; Laanab, L. ; Fahoume, M.
Author_Institution :
Fac. des Sci., Univ. Ibn Tofail, Kénitra, Morocco
Abstract :
In2S3 thin films were elaborated onto glass substrate by spray pyrolysis method using sulphur-to-indium ratio ([S]/[In]) of 3 and different substrate temperatures. The as-deposited and annealing films were characterized by X-Ray Diffraction (XRD) for the structural, Energy Dispersive Spectroscopy (EDS) for the composition, Raman spectroscopy for samples quality and optical transmittance to measure gap energy. XRD revealed a β-In2S3 phase with a preferential orientation along (0 0 12) plane. Good stoichiometry was noticed in EDS measurement. Raman spectroscopy analysis shows a prominent of active modes of β-In2S3 films with annealing. This is confirming an improvement of structure cristallinity of all films and optical analysis shows a decrease of gap energy after annealing.
Keywords :
Raman spectra; X-ray chemical analysis; X-ray diffraction; annealing; energy gap; indium compounds; pyrolysis; semiconductor thin films; EDS; In2S3; Raman spectroscopy; SiO2; X-ray difraction; XRD; annealing; energy dispersive spectroscopy; gap energy; glass substrate; optical analysis; optical transmittance; spray pyrolysis; structural properties; sulphur-indium ratio; thin films; Annealing; Films; Physics; Substrates; Temperature measurement; X-ray scattering; In2S3; annealing; raman spectroscopy; spray pyrolysis; thin films;
Conference_Titel :
Renewable and Sustainable Energy Conference (IRSEC), 2013 International
Conference_Location :
Ouarzazate
Print_ISBN :
978-1-4673-6373-0
DOI :
10.1109/IRSEC.2013.6529664
