Simulation of In0.52Ga0.48N solar cell using AMPS-1D

In_xGa_1-xN alloys feature a bandgap ranging from 0.7eV to 3.4eV, covering almost the entire solar spectrum. To optimize the efficiency and the best parameters of solar cells, numerical simulations of In_xGa_1-xN single junction. The simulation modeling is important and indispensable for designing and fabricating In_xGa_1-xN single junction. We changed the In doping and the thickness of the p-In₅₂Ga₄₈N to determine the short circuit current density (Jsc), open circuit voltage (Voc), fill factor (FF) and conversion efficiency (η). For In₅₂Ga₄₈N single junction solar cell, the Jsc, Voc, and FF have a strong dependence on the In composition. In composition is a critical parameter to determine Jsc, Voc, FF, and η of InGaN solar cells. In_0.52Ga_0.48N Solar cell shows the maximum il ~ 23%. The band gap of In_0.52Ga_0.48N is 1.64 eV and is almost the same with AlGaAs. When the total layer thickness is greater than 500 nm, the absorption becomes saturated and the η increases smoothly. The simulation results are congruent with this trend.