DocumentCode :
606677
Title :
Detailed analysis of surface recombination in crystalline silicon solar cells
Author :
Belghachi, A.
Author_Institution :
Phys. Dept., Univ. of Bechar, Bechar, Algeria
fYear :
2013
fDate :
7-9 March 2013
Firstpage :
161
Lastpage :
166
Abstract :
Losses in solar cells are major concern for photovoltaic designers and minimizing them is the aim of all workers in this field. Recombination of photo generated charge carriers, both in the bulk and at surfaces, is the most prominent loss mechanism. In this work, surface recombination effect on crystalline silicon solar cells, both at the front and rear sides, is investigated. For typical thin silicon solar cell (100μm) the rear surface recombination is more important than the front. This could be treated by reducing rear surface metallization coverage or of a BSF layer while the front recombination could be reduced by surface passivation.
Keywords :
metallisation; silicon; solar cells; crystalline silicon solar cells; photo generated charge carriers; prominent loss mechanism; rear surface metallization coverage reduction; size 100 mum; surface passivation; surface recombination; surface recombination effect; Electron traps; Photovoltaic cells; Radiative recombination; Silicon; Surface treatment; Fermi level; external quantum efficiency; silicon; surface recombination;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Renewable and Sustainable Energy Conference (IRSEC), 2013 International
Conference_Location :
Ouarzazate
Print_ISBN :
978-1-4673-6373-0
Type :
conf
DOI :
10.1109/IRSEC.2013.6529729
Filename :
6529729
Link To Document :
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