Integration of a new Through Silicon Via concept in a microelectronic pressure sensor

A novel Through Silicon Via approach developed by Bosch offers high integration density of MEMS with a great cost saving potential. In this paper a Si-TSV process for MEMS is presented. To assess the stress influence of the TSV process on the silicon substrate, the TSV process was integrated in a piezo-resistive pressure sensor as a Via-Last approach. Etching and deposition of multiple layers as well as grinding of a silicon wafer may cause thermal and mechanical stress, which may affect the sensor´s operation and signal-processing. Electrical measurements were carried out to evaluate the stress-responsive sensor characteristics. Results show that the Si-TSV process presented does not cause any deterioration of the pressure sensor´s characteristics.