DocumentCode :
606844
Title :
A multi-scale approach to wafer to wafer metallic bonding in MEMS
Author :
Ghisi, A. ; Corigliano, Alberto ; Mariani, Stefano ; Allegato, G.
Author_Institution :
Dipt. di Ing. Civile e Ambientale, Politec. di Milano, Vinci, Italy
fYear :
2013
fDate :
14-17 April 2013
Firstpage :
1
Lastpage :
6
Abstract :
A three-scale approach to thermo-compression, metallic wafer bonding is here presented. The approach focuses on the purely mechanical side of the process, identifying three different length-scales: the macro-scale, at which the whole wafer is considered, to define the average contact pressure within each single die; the mesoscale, at which the aforementioned average pressure at the die level is applied to the MEMS bonding ring, to study stress diffusion in it; and the micro-scale, at which a micro-mechanically informed morphology of a representative volume of the two metallic rings in contact is considered along with their surface roughness, to get insights into local features of the sealing. The proposed approach can describe local effects due to a space-varying pressure, and can help to enhance and speedup the design phase of the bonding rings.
Keywords :
micromechanical devices; wafer bonding; MEMS bonding ring; average contact pressure; die level; metallic rings; metallic wafer bonding; space varying pressure; surface roughness; thermocompression; Abstracts; Bonding; Lead;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2013 14th International Conference on
Conference_Location :
Wroclaw
Print_ISBN :
978-1-4673-6138-5
Type :
conf
DOI :
10.1109/EuroSimE.2013.6529905
Filename :
6529905
Link To Document :
بازگشت