Title :
Resistance electric filed dependence simulation of piezoresistive silicon pressure sensor and improvement by shield layer
Author :
Gang Cao ; Chaojun Liu ; Xiaogang Liu ; Xuefang Wang ; Sheng Liu
Author_Institution :
State Key Lab. for Digital Manuf. Equip. & Technol., Huazhong Univ. of Sci. & Technol., Wuhan, China
Abstract :
This paper models two structures for simulating the resistance electric field dependence of piezoresistor in silicon pressure sensor. The difference of the two structures is one with a shield layer and the other one without it. The simulation results show that the shield layer can shield the electric field no matter where it origins externally or it is caused by fixed oxide charges, which is very useful to improve the stability of the piezoresistor.
Keywords :
electric fields; elemental semiconductors; piezoresistive devices; pressure sensors; resistors; silicon; Si; fixed oxide charges; piezoresistor; pressure sensor; resistance electric filed dependence simulation; shield layer; Abstracts; Electromagnetics; Logic gates; Manufacturing; Monitoring; Resistance; Silicon;
Conference_Titel :
Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2013 14th International Conference on
Conference_Location :
Wroclaw
Print_ISBN :
978-1-4673-6138-5
DOI :
10.1109/EuroSimE.2013.6529926
