DocumentCode :
606931
Title :
IC-Package Interaction
Author :
Vandevelde, B. ; Ivankovic, A. ; Debecker, B. ; Lofrano, M. ; Vanstreels, K. ; Guo, Wenyong ; Cherman, V. ; Gonzalez, M. ; Van der Plas, G. ; De Wolf, Ingrid ; Beyne, Eric ; Tokei, Z.
Author_Institution :
Imec, Leuven, Belgium
fYear :
2013
fDate :
14-17 April 2013
Firstpage :
1
Lastpage :
4
Abstract :
Chip Package Interaction (CPI) gained a lot of importance in the last years. The reason is twofold. First, advanced node IC technologies requires dielectrics in the BEOL (back-end-of-line) with a decreasing k value. These so-called (ultra) low-k materials have a reduced stiffness and adhesion strength to the barrier materials, making the BEOL much more vulnerable to externally applied stress due to packaging. Secondly, advanced packaging technologies such as 3D stacked IC´s use thinned dies (down to 25μm) which can cause much higher stresses at transistor level, resulting in mobility shifts.
Keywords :
carrier mobility; chip scale packaging; three-dimensional integrated circuits; 3D stacked IC; BEOL; barrier materials; chip package interaction; decreasing k value; externally applied stress; low-k materials; mobility shifts; Abstracts; Dielectrics; Electronic mail; Joints; Materials; Stress; Through-silicon vias;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2013 14th International Conference on
Conference_Location :
Wroclaw
Print_ISBN :
978-1-4673-6138-5
Type :
conf
DOI :
10.1109/EuroSimE.2013.6529992
Filename :
6529992
Link To Document :
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