An on-chip dynamic supply current monitor for testing of digital circuits

Author

Gyepes, G. ; Arbet, D. ; Brenkus, Juraj ; Stopjakova, V. ; Mihalov, Jozef

Author_Institution

Inst. of Electron. & Photonics, Slovak Univ. of Technol., Bratislava, Slovakia

fYear

2013

fDate

16-17 April 2013

Firstpage

156

Lastpage

161

Abstract

The paper deals with the dynamic supply current testing (I_DDT) of SRAM cells and arrays. An I_DDT current sensor and sensing method are presented and explained. The effects of leakage current and static current consumption on the monitoring technique and efficiency are also discussed. The efficiency of the proposed test in unveiling weak open defects is demonstrated through simulations carried out on a 64-bit SRAM array designed in a 90 nm CMOS technology.

Keywords

CMOS memory circuits; SRAM chips; circuit testing; digital circuits; CMOS technology; IDDT current sensor; SRAM arrays; SRAM cells; digital circuit testing; dynamic supply current testing; leakage current; monitoring technique; on-chip dynamic supply current monitor; sensing method; static current consumption; Leakage currents; Monitoring; SRAM cells; Sensors; Testing; Transistors; 6-transistor cell; IDDT; SRAM; current test; defect coverage; dynamic supply current; leakage; memory test; parametric test; weak open defects;

fLanguage

English

Publisher

ieee

Conference_Titel

Radioelektronika (RADIOELEKTRONIKA), 2013 23rd International Conference

Conference_Location

Pardubice

Print_ISBN

978-1-4673-5516-2

Type

conf

DOI

10.1109/RadioElek.2013.6530907

Filename

6530907