Title :
An on-chip dynamic supply current monitor for testing of digital circuits
Author :
Gyepes, G. ; Arbet, D. ; Brenkus, Juraj ; Stopjakova, V. ; Mihalov, Jozef
Author_Institution :
Inst. of Electron. & Photonics, Slovak Univ. of Technol., Bratislava, Slovakia
Abstract :
The paper deals with the dynamic supply current testing (IDDT) of SRAM cells and arrays. An IDDT current sensor and sensing method are presented and explained. The effects of leakage current and static current consumption on the monitoring technique and efficiency are also discussed. The efficiency of the proposed test in unveiling weak open defects is demonstrated through simulations carried out on a 64-bit SRAM array designed in a 90 nm CMOS technology.
Keywords :
CMOS memory circuits; SRAM chips; circuit testing; digital circuits; CMOS technology; IDDT current sensor; SRAM arrays; SRAM cells; digital circuit testing; dynamic supply current testing; leakage current; monitoring technique; on-chip dynamic supply current monitor; sensing method; static current consumption; Leakage currents; Monitoring; SRAM cells; Sensors; Testing; Transistors; 6-transistor cell; IDDT; SRAM; current test; defect coverage; dynamic supply current; leakage; memory test; parametric test; weak open defects;
Conference_Titel :
Radioelektronika (RADIOELEKTRONIKA), 2013 23rd International Conference
Conference_Location :
Pardubice
Print_ISBN :
978-1-4673-5516-2
DOI :
10.1109/RadioElek.2013.6530907
