Title :
Compact modeling for simulation of circuit reliability: Historical and industrial perspectives
Author_Institution :
Design Autom. Technol. Group, Elpida Memory, Inc., Sagamihara, Japan
Abstract :
This paper provides a historical background of the first developments of compact modeling for circuit-level reliability simulation at UC Berkeley, and the subsequent implementation into the BERT reliability simulator more than 20 years ago. A brief description of the advancement in the technology since then is given, and some industrial perspectives are summarized concerning how such a tool can be used to effectively optimize product design while ensuring reliability, as well as clarifying issues which still remain in the industrial design environment.
Keywords :
MOSFET; semiconductor device models; semiconductor device reliability; BERT reliability simulator; MOSFET; TIC Berkeley; circuit-level reliability simulation; compact modeling; historical perspectives; industrial design environment; industrial perspectives; product design; Degradation; Hot carriers; Integrated circuit modeling; Integrated circuit reliability; Reliability engineering; Semiconductor device modeling; NBTI; bipolar hot-carrier; circuit; circuit reliability; compact model; electromigration; hot-carrier; oxide breakdown; simulation;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2013.6531941