Power supply clamp for multi-domain mixed-signal SiGe BiCMOS applications

Author

Salcedo, Javier A. ; Parthasarathy, Srinivasan ; Hajjar, Jean-Jacques

Author_Institution

Analog Devices, Inc., Wilmington, MA, USA

fYear

2013

fDate

14-18 April 2013

Abstract

An active power supply clamp for precision high speed SiGe BiCMOS applications is introduced. The clamp architecture includes functional blocks for transient stress detection, stress-adapted activation feedback and mistriggering control. Electrostatic discharge (ESD) robustness is demonstrated in high speed/high voltage BiCMOS SiGe applications operating at supply voltages beyond the breakdown voltage constraint in the bipolar signal processing blocks during ESD stress.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; clamps; electrostatic discharge; mixed analogue-digital integrated circuits; power supply circuits; ESD stress; SiGe; active power supply clamp; bipolar signal processing blocks; breakdown voltage constraint; clamp architecture; electrostatic discharge robustness; functional blocks; mistriggering control; multidomain mixed-signal BiCMOS applications; stress-adapted activation feedback; transient stress detection; Capacitance; Clamps; Electrostatic discharges; Silicon germanium; Stress; Transient analysis; Voltage measurement; Electrostatic Discharge (ESD); High Speed RF Amplifier; Low Noise Amplifier; Microwave Transceiver; SiGe BiCMOS Technology; Supply Clamp; Wireless Infrastructure;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2013 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4799-0112-8

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2013.6531948

Filename

6531948