DocumentCode :
608130
Title :
Enhanced PMOS-triggered PMLSCR with robust EOS immunity
Author :
Shih-Yu Wang ; Yong-Han He ; Chieh-Wei He ; Hao-Chan Huang ; Yao-Wen Chang ; Tao-Cheng Lu ; Kuang-Chao Chen ; Chih-Yuan Lu
Author_Institution :
Technol. Dev. Center, Macronix Int. Co., Ltd., Hsinchu, Taiwan
fYear :
2013
fDate :
14-18 April 2013
Abstract :
An enhanced PMOS-triggered PMLSCR is proposed. Under the condition that both PNP and NPN BJT´s are triggered simultaneously, voltage overshoot and turn-on uniformity can be further improved. From TCAD simulation, it is clear that with the help of trigger current, conduction path of SCR goes deeper and snapback voltage is reduced. By the designed power sequence, holding voltage and current of SCR devices considering self-heating effect are attained. Robust EOS immunity can be assured accordingly.
Keywords :
MOS-controlled thyristors; bipolar transistors; circuit CAD; circuit simulation; electrostatic discharge; technology CAD (electronics); trigger circuits; NPN BJT; PNP BJT; TCAD simulation; enhanced PMOS-triggered PMLSCR; holding current; holding voltage; p-type modified lateral silicon-controlled rectifier; power sequence design; robust EOS immunity; self-heating effect; snapback voltage reduction; turn-on uniformity; voltage overshoot; Anodes; Earth Observing System; Electrostatic discharges; Robustness; Thyristors; Trigger circuits; Video recording; EOS; ESD; MLSCR; PMOS-Triggered; TCAD; voltage overshoot;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
ISSN :
1541-7026
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
Type :
conf
DOI :
10.1109/IRPS.2013.6531949
Filename :
6531949
Link To Document :
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