DocumentCode
608139
Title
Reduction of the BTI time-dependent variability in nanoscaled MOSFETs by body bias
Author
Franco, Jacopo ; Kaczer, Ben ; Toledano-Luque, Maria ; Roussel, P.J. ; Groeseneken, Guido ; Schwarz, Benedikt ; Bina, Markus ; Waltl, M. ; Wagner, P.-J. ; Grasser, Tibor
Author_Institution
imec, Leuven, Belgium
fYear
2013
fDate
14-18 April 2013
Abstract
We study the impact of individual charged gate oxide defects on the characteristics of nanoscaled pMOSFETs for varying body biases. Both a reduced time-zero variability and a reduced time-dependent variability are observed when a forward body bias is applied. In order to explain these observations, a model based on the modulation of the number of unscreened dopant atoms within the channel depletion region is proposed.
Keywords
MOSFET; nanoelectronics; BTI time-dependent variability reduction; channel depletion region; charged gate oxide defects; forward body bias; nanoscaled MOSFET; negative bias temperature instability; pMOSFET; reduced time-dependent variability; reduced time-zero variability; unscreened dopant atoms; Doping; Logic gates; MOSFET; Modulation; Nanoscale devices; Reliability; Stress; Body Bias; Nanoscale; Negative Bias Temperature Instability; Variability; pMOSFETs;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location
Anaheim, CA
ISSN
1541-7026
Print_ISBN
978-1-4799-0112-8
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2013.6531958
Filename
6531958
Link To Document