Title :
Reduction of the BTI time-dependent variability in nanoscaled MOSFETs by body bias
Author :
Franco, Jacopo ; Kaczer, Ben ; Toledano-Luque, Maria ; Roussel, P.J. ; Groeseneken, Guido ; Schwarz, Benedikt ; Bina, Markus ; Waltl, M. ; Wagner, P.-J. ; Grasser, Tibor
Author_Institution :
imec, Leuven, Belgium
Abstract :
We study the impact of individual charged gate oxide defects on the characteristics of nanoscaled pMOSFETs for varying body biases. Both a reduced time-zero variability and a reduced time-dependent variability are observed when a forward body bias is applied. In order to explain these observations, a model based on the modulation of the number of unscreened dopant atoms within the channel depletion region is proposed.
Keywords :
MOSFET; nanoelectronics; BTI time-dependent variability reduction; channel depletion region; charged gate oxide defects; forward body bias; nanoscaled MOSFET; negative bias temperature instability; pMOSFET; reduced time-dependent variability; reduced time-zero variability; unscreened dopant atoms; Doping; Logic gates; MOSFET; Modulation; Nanoscale devices; Reliability; Stress; Body Bias; Nanoscale; Negative Bias Temperature Instability; Variability; pMOSFETs;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2013.6531958
