Title :
GaN-HEMTs devices with single- and double-heterostructure for power switching applications
Author :
Meneghesso, Gaudenzio ; Zanandrea, Alberto ; Stocco, Andrea ; Rossetto, Isabella ; De Santi, C. ; Rampazzo, Franco ; Meneghini, Matteo ; Zanoni, Enrico ; Bahat-Treidel, E. ; Hilt, O. ; Ivo, P. ; Wuerfl, J.
Author_Institution :
Dept. of Inf. Eng., Univ. of Padova, Padua, Italy
Abstract :
We report on an extensive study of single- (SH) and double-heterostructure (DH) HEMTs based on gallium nitride, for power switching applications. The analysis is based on dc, pulsed and breakdown measurements, which were carried out on five different epitaxial structures.
Keywords :
III-V semiconductors; aluminium compounds; electric breakdown; gallium compounds; high electron mobility transistors; leakage currents; power semiconductor switches; wide band gap semiconductors; AlGaN; DH devices; HEMT devices; SH devices; breakdown measurements; breakdown voltage; dc measurements; degradation process; double-heterostructure; electroluminescence; epitaxial structures; measurable kink; off-state step stress; power switching applications; pulsed measurements; punch-through leakage current components; single-heterostructure; Buffer layers; DH-HEMTs; Degradation; Gallium nitride; Logic gates; MODFETs; Gallium Nitride; power HEMTs; reliability;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2013.6531983
