Title :
Status Quo and trends of GaN power devices
Author_Institution :
Adv. Technol. Res. Lab., Panasonic, Kyoto, Japan
Abstract :
This paper reviews the recently developed technologies for GaN-based power devices which is coming close to the practical application. Experimentally fabricated GaN inverter system attained the world-highest conversion efficiency over 99.3% by using GIT (Gate Injection Transistor). Reliability issues become increasingly essential due to the increase of power density of GaN-based device. Passivation technique is addressed in view of improving the on-resistance as well as suppressing the current collapse. Direct liquid-immersion package is also demonstrated, where junction temperature is drastically reduced in the built-in heat pipe structure.
Keywords :
III-V semiconductors; gallium compounds; invertors; power semiconductor devices; transistors; wide band gap semiconductors; GIT; GaN; built-in heat pipe structure; current collapse suppression; direct liquid-immersion package; gate injection transistor; inverter system; junction temperature; on-resistance; power devices; status quo; world-highest conversion efficiency; Films; Gallium nitride; III-V semiconductor materials; Inverters; Logic gates; Passivation; Silicon compounds; GIT; GaN; current collapse; heat pipe; inverter;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2013.6531984
