Status Quo and trends of GaN power devices

Author

Ueda, Daisuke

Author_Institution

Adv. Technol. Res. Lab., Panasonic, Kyoto, Japan

fYear

2013

fDate

14-18 April 2013

Abstract

This paper reviews the recently developed technologies for GaN-based power devices which is coming close to the practical application. Experimentally fabricated GaN inverter system attained the world-highest conversion efficiency over 99.3% by using GIT (Gate Injection Transistor). Reliability issues become increasingly essential due to the increase of power density of GaN-based device. Passivation technique is addressed in view of improving the on-resistance as well as suppressing the current collapse. Direct liquid-immersion package is also demonstrated, where junction temperature is drastically reduced in the built-in heat pipe structure.

Keywords

III-V semiconductors; gallium compounds; invertors; power semiconductor devices; transistors; wide band gap semiconductors; GIT; GaN; built-in heat pipe structure; current collapse suppression; direct liquid-immersion package; gate injection transistor; inverter system; junction temperature; on-resistance; power devices; status quo; world-highest conversion efficiency; Films; Gallium nitride; III-V semiconductor materials; Inverters; Logic gates; Passivation; Silicon compounds; GIT; GaN; current collapse; heat pipe; inverter;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2013 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4799-0112-8

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2013.6531984

Filename

6531984