Title :
HKMG process impact on N, P BTI: Role of thermal IL scaling, IL/HK integration and post HK nitridation
Author :
Joshi, Kishor ; Hung, Stephen ; Mukhopadhyay, Saibal ; Chaudhary, Varun ; Nanaware, N. ; Rajamohnan, B. ; Sato, Takao ; Bevan, M. ; Wei, A. ; Noori, Abdollah ; McDougal, B. ; Ni, C. ; Saheli, G. ; Lazik, C. ; Liu, Peng ; Chu, Delin ; Date, L. ; Datta, Sou
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol. Bombay, Mumbai, India
Abstract :
NBTI and PBTI are studied in IL/HK/MG gate stacks having EOT down to ~ 6Å and fabricated using low T RTP based thermal IL and a novel IL/HK integration. At equivalent EOT, proposed stacks provide improved NBTI and similar PBTI when compared to conventional Chem-Ox IL based HKMG stacks. EOT scaling achieved by RTP thermal IL scaling shows lower rate of increase in NBTI and PBTI when compared to Chem-Ox IL scavenged stacks. Impact of Nitrogen and role of post HK nitridation are studied. Physical mechanism of improved BTI in proposed stacks is discussed in detail.
Keywords :
MOSFET; high-k dielectric thin films; nitridation; Chem-Ox IL based HKMG stacks; EOT scaling; HKMG process impact; IL-HK Integration; MOSFET gate stacks; RTP thermal IL scaling; equivalent oxide thickness; high-k metal gate process impact; interfacial layer; post HK nitridation; Gate leakage; Hafnium compounds; Insulators; Logic gates; Stress; Stress measurement; Chem-Ox IL; DCIV; EOT scaling; HKMG; IL scaling; NBTI; PBTI; SILC; charge trapping; flicker noise; gate leakage; mobility; thermal IL; trap generation;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2013.6532014
