Title :
Hopping effect of hydrogen-doped silicon oxide insert RRAM by supercritical CO2 fluid treatment
Author :
Kuan-Chang Chang ; Chih-Hung Pan ; Ting-Chang Chang ; Tsung-Ming Tsai ; Rui Zhang ; Jen-Chung Lou ; Tai-Fa Young ; Jung-Hui Chen ; Chih-Cheng Shih ; Tian-Jian Chu ; Jian-Yu Chen ; Yu-Ting Su ; Jhao-Ping Jiang ; Kai-Huang Chen ; Hui-Chun Huang ; Yong-En Sy
Author_Institution :
Dept. of Mater. & Optoelectron. Sci., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
Abstract :
In this letter, we introduced hydrogen ions into titanium metal doped into SiO2 thin film as the insulator of resistive random access memory (RRAM) by supercritical carbon dioxide (SCCO)2 fluid treatment. After treatment, low resistance state split in to two states, we find the insert RRAM, which means it has an operating polarity opposite from normal RRAM. The difference of the insert RRAM is owing to the resistive switching dominated by hydrogen ions, dissociated from OH bond, which was not by oxygen ions as usual. The current conduction mechanism of insert RRAM was hopping conduction due to the metal titanium reduction reaction through SCCO2.
Keywords :
hydrogen ions; random-access storage; CO2; Hopping effect; SiO2; hopping conduction; hydrogen doped silicon oxide insert RRAM; hydrogen ions; metal titanium reduction reaction; resistive random access memory; resistive switching; supercritical carbon dioxide fluid treatment; thin film; titanium metal; Hopping conduction; resistive random access memory (RRAM); supercritical fluid;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2251995
