Title :
TOF-SIMS characterization of Boron and phosphorus distribution in sub-atmospheric chemical vapour deposition borophosphosilicate glass (SA-CVD BPSG) films
Author :
Ferlito, E.P. ; Pizzo, G. ; De Gregorio, R. ; Anastasi, Giuseppe ; Ricciari, R. ; Mello, Darli
Author_Institution :
STMicroelectron. - Front-End Manuf., Catania, Italy
Abstract :
Deposition of BPSG films as dielectrics is a critical step in semiconductor device manufacturing. Accurate control of concentration depth profile of Boron and Phosphorus in BPSG is important, because these variables determine the performance and reliability of the dielectric film. In this study, a method to characterize BPSG films using TOF-SIMS is shown. A failure analysis case study in which TOF-SIMS characterization allows correlating Tungsten extrusion with non-uniform dopant distribution is presented.
Keywords :
boron; chemical vapour deposition; dielectric thin films; failure analysis; phosphorus; secondary ion mass spectroscopy; semiconductor device reliability; SA-CVD BPSG film characterization method; TOF-SIMS characterization; boron distribution; concentration depth profile control; dielectric film reliability; failure analysis; flight-secondary ion mass spectrometry analysis technique; nonuniform dopant distribution; phosphorus distribution; semiconductor device manufacturing; subatmospheric chemical vapour deposition borophosphosilicate glass films; tungsten extrusion; Boron; Face; Films; Glass; Market research; Monitoring; Silicon; BPSG; P and B depth profile; TOF-SIMS;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2013.6532026
