TOF-SIMS characterization of Boron and phosphorus distribution in sub-atmospheric chemical vapour deposition borophosphosilicate glass (SA-CVD BPSG) films

Author

Ferlito, E.P. ; Pizzo, G. ; De Gregorio, R. ; Anastasi, Giuseppe ; Ricciari, R. ; Mello, Darli

Author_Institution

STMicroelectron. - Front-End Manuf., Catania, Italy

fYear

2013

fDate

14-18 April 2013

Abstract

Deposition of BPSG films as dielectrics is a critical step in semiconductor device manufacturing. Accurate control of concentration depth profile of Boron and Phosphorus in BPSG is important, because these variables determine the performance and reliability of the dielectric film. In this study, a method to characterize BPSG films using TOF-SIMS is shown. A failure analysis case study in which TOF-SIMS characterization allows correlating Tungsten extrusion with non-uniform dopant distribution is presented.

Keywords

boron; chemical vapour deposition; dielectric thin films; failure analysis; phosphorus; secondary ion mass spectroscopy; semiconductor device reliability; SA-CVD BPSG film characterization method; TOF-SIMS characterization; boron distribution; concentration depth profile control; dielectric film reliability; failure analysis; flight-secondary ion mass spectrometry analysis technique; nonuniform dopant distribution; phosphorus distribution; semiconductor device manufacturing; subatmospheric chemical vapour deposition borophosphosilicate glass films; tungsten extrusion; Boron; Face; Films; Glass; Market research; Monitoring; Silicon; BPSG; P and B depth profile; TOF-SIMS;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2013 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4799-0112-8

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2013.6532026

Filename

6532026