DocumentCode
608209
Title
Building the electrical model of the pulsed photoelectric laser stimulation of an NMOS transistor in 90nm technology
Author
Sarafianos, A. ; Gagliano, O. ; Serradeil, V. ; Lisart, M. ; Dutertre, J.-M. ; Tria, Assia
Author_Institution
STMicroelectron., Rousset, France
fYear
2013
fDate
14-18 April 2013
Abstract
This paper presents measurements of pulsed photoelectrical laser stimulation of an NMOS transistor in 90nm technology. The laser power was able to trig the NPN parasitic bipolar Drain/Psubstrate/Source. An electrical model is proposed in order to simulate effects induced by the laser. Results extracted from the electrical simulator are compared to measurements.
Keywords
MOSFET; measurement by laser beam; semiconductor device measurement; semiconductor device models; NMOS transistor; NPN parasitic bipolar drain-psubstrate-source; electrical model; laser power; pulsed photoelectric laser stimulation; size 90 nm; Junctions; Laser modes; MOSFET; Measurement by laser beam; Photoconductivity; Power lasers; Semiconductor lasers; 1064nm wavelength; NMOS transistor; parasitic bipolar transistor; pulsed PLS;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location
Anaheim, CA
ISSN
1541-7026
Print_ISBN
978-1-4799-0112-8
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2013.6532028
Filename
6532028
Link To Document