DocumentCode :
608213
Title :
Accelerated stress testing methodology to risk assess silicon-package thermomechanical failure modes resulting from moisture exposure under use condition
Author :
Rangaraj, S. ; Daeil Kwon ; Min Pei ; Hicks, J. ; Leatherman, G. ; Lucero, Adrian ; Wilson, Thomas ; Streit, S. ; Jun He
Author_Institution :
Technol. Dev. & Manuf. Quality & Reliability, Intel Corp., Hillsboro, OR, USA
fYear :
2013
fDate :
14-18 April 2013
Abstract :
IC components are exposed to moisture and thermal cycles during chip-package-board assembly and in their end use conditions. Moisture exposure influences the mechanical integrity of silicon backend dielectrics, assembly/packaging materials and packages. Reliability performance under accelerated stresses that simulate use conditions are often a critical factor in choice of materials, processing options and design rules. A complete assessment of the cumulative environmental exposure from chip-package assembly, shipment/storage, board system assembly, through end-customer use is required to guarantee product performance and reliability. This paper will detail these end user environments and use failure mode/mechanism specific acceleration models to develop accurate accelerated life testing plans and requirements. These requirements will then be compared to JEDEC standards based requirements and a need for re-calibration of these standards to more appropriate temperatures and stress durations will be highlighted.
Keywords :
assembling; failure analysis; integrated circuit packaging; integrated circuit reliability; integrated circuit testing; life testing; risk management; stress analysis; IC components; JEDEC standards; accelerated life testing plans; accelerated stress testing methodology; assembly-packaging materials; board system assembly; chip-package-board assembly; cumulative environmental exposure; design rules; end user environments; failure mode-mechanism specific acceleration models; mechanical integrity; moisture cycle; moisture exposure; processing options; product performance; reliability performance; risk assessment; silicon backend dielectrics; silicon-package thermomechanical failure modes; standard re-calibration; stress durations; thermal cycle; through end-customer use; Acceleration; Materials; Mathematical model; Moisture; Reliability; Standards; Stress; HAST; JEDEC standard; acceleration model; moisture; thermal cyclin; use conditions;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
ISSN :
1541-7026
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
Type :
conf
DOI :
10.1109/IRPS.2013.6532032
Filename :
6532032
Link To Document :
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