Title :
Reliability characterization and FEM modeling of power devices under repetitive power pulsing
Author :
Pozzobon, Fiorella ; Paci, D. ; Pizzo, G. ; Buri, A. ; Morin, Sonia ; Carace, F. ; Andreini, Antonio ; Gastaldi, D. ; Bertarelli, E. ; Lucchini, R. ; Vena, P.
Author_Institution :
STMicroelectron., Cornaredo, Italy
Abstract :
In this work a combined experimental/numerical approach to describe the thermo-mechanical behavior of power devices under repetitive power pulsing is presented. Stress tests have been carried out on power DMOS implemented in Smart Power BCD technology with different Back-End Of Line (BEOL) schemes, including, for the first time, full Copper. Mechanical laboratory nano-indentation tests have been used to determine constituent properties of the metal layers. Thermo-mechanical 3D FEM modeling has been used to simulate a multi-cycle thermal loading of a whole power device with its package. Results from simulation have been qualitatively compared to experimental results.
Keywords :
finite element analysis; mechanical testing; nanoindentation; power MOSFET; semiconductor device models; semiconductor device reliability; semiconductor device testing; stress analysis; BEOL schemes; back-end of line scheme; mechanical laboratory nanoindentation tests; multicycle thermal loading simulation; power DMOS; power devices; reliability characterization; repetitive power pulsing test; smart power BCD technology; stress tests; thermomechanical 3D FEM modeling; thermomechanical behavior; Aluminum; Copper; Plastics; Strain; Stress; Reliability; active cycling; power devices; thermomechanical fatigue;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2013.6532033
