Channel hot-carriers degradation in MOSFETs: A conductive AFM study at the nanoscale

Author

Bayerl, A. ; Porti, M. ; Martin-Martinez, J. ; Lanza, Mario ; Rodriguez, Roberto ; Velayudhan, V. ; Amat, Esteve ; Nafria, M. ; Aymerich, X. ; Gonzalez, M.B. ; Simoen, Eddy

Author_Institution

Dept. d´Eng. Electron., Univ. Autonoma de Barcelona (UAB), Barcelona, Spain

fYear

2013

fDate

14-18 April 2013

Abstract

In this work, the gate stack electrical properties of fresh and channel-hot-carrier (CHC) stressed MOSFETs have been investigated at the nanoscale with a Conductive Atomic Force Microscope (CAFM). For the first time, by measuring on the bare oxide, the CAFM has allowed evaluation of the degradation induced along the channel by a previous CHC stress. In particular, higher gate leakage was measured close to source and drain, which has been related to NBTI and CHC degradation, respectively.

Keywords

MOSFET; atomic force microscopy; electric properties; hot carriers; CAFM; CHC degradation; CHC stress; MOSFET; NBTI degradation; bare oxide; channel hot-carriers degradation; conductive AFM study; conductive atomic force microscope; gate leakage; gate stack electrical properties; nanoscale; Current measurement; Degradation; Dielectrics; Logic gates; MOSFET; Stress; Stress measurement; Atomic Force Microscopy; CHC degradation; MOSFET; NBTI;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2013 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4799-0112-8

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2013.6532039

Filename

6532039