DocumentCode :
608230
Title :
Electrical characterization of undoped diamond films for RF MEMS application
Author :
Michalas, L. ; Koutsoureli, M. ; Papandreou, E. ; Papaioannou, G. ; Saada, S. ; Mer, C. ; Hugon, R. ; Bergonzo, P. ; Leuliet, A. ; Martins, Pedro ; Bansropun, S. ; Ziaei, A.
Author_Institution :
Phys. Dept., Nat. Kapodistrian Univ. of Athens, Athens, Greece
fYear :
2013
fDate :
14-18 April 2013
Abstract :
Diamond films are considered as superior dielectric in comparison to Si3N4 for MEMS applications. The present paper provides a detail characterization study of electrical properties of undoped microcrystalline diamond films involving dc and charge/discharge transient analysis over a wide temperature range. The aim of the study is to provide a better insight on the physical mechanisms responsible for the charge injection and collection processes under different operation conditions applicable to MEMS capacitive switches.
Keywords :
diamond; dielectric thin films; microswitches; transient analysis; C; MEMS capacitive switches; RF MEMS application; charge collection process; charge injection process; charge-discharge transient analysis; dc transient analysis; electrical characterization; electrical properties; undoped microcrystalline diamond films; Conductivity; Diamonds; Electric fields; Films; Micromechanical devices; Temperature measurement; Transient analysis; RF MEMS; charge collection; diamonds; dielectric charging; electrical characterization;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
ISSN :
1541-7026
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
Type :
conf
DOI :
10.1109/IRPS.2013.6532049
Filename :
6532049
Link To Document :
بازگشت