Title :
Space radiation and reliability qualifications on 65nm CMOS 600MHz microprocessors
Author :
Clerc, Sylvain ; Abouzeid, Fady ; Gasiot, Gilles ; Daveau, J.-M. ; Bottoni, C. ; Glorieux, M. ; Autran, Jean-Luc ; Cacho, F. ; Huard, Vincent ; Dugoujon, Laurent ; Weigand, R. ; Malou, Florence ; Hili, L. ; Roche, Philippe
Author_Institution :
STMicroelectron., Crolles, France
Abstract :
Recent space programs have reached the limits of the current space digital ASIC offers, mainly relying on CMOS 180nm. The new ST CMOS 65nm space program described in this paper shows how those limits are overcome. Small modifications to the commercial bulk process, paired with cost effective design reinforcements allow higher density and better energy efficiency while ensuring a strong space-grade resilience. The implementation of a 32-bit SPARC LEON3 microprocessor demonstrates the capabilities of this new technology.
Keywords :
CMOS digital integrated circuits; application specific integrated circuits; integrated circuit reliability; microprocessor chips; SPARC LEON3 microprocessor; ST CMOS space program; commercial bulk process; cost effective design reinforcements; digital ASIC; energy efficiency; frequency 600 MHz; reliability qualifications; size 180 nm; size 65 nm; space radiation; space-grade resilience; word length 32 bit; CMOS integrated circuits; Clocks; Computer architecture; Microprocessors; Program processors; Registers; Stress;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2013.6532051
