Reliability of Dual Damascene TSV for high density integration: The electromigration issue

This paper deals with electromigration tests on Dual Damascene TSV, a low-cost TSV process. Up- and down-stream stress configurations are investigated and we demonstrate the independence of the failure´s localization with the electron flow direction. Thus, unlike the standard (single damascene) TSV process, the failure (copper depletion) location is always located inside the metal level directly below the TSV. A limited number of simple design rules may be used in order to ensure reliability requirements.