Title :
The internal circuit damage of a high-voltage product during the negative-current-triggered (NCT) latch-up test
Author :
Jian-Hsing Lee ; Kung, Chung Yuan ; Kung, E. ; Dao-Hong Yang ; Shih, J.R.
Author_Institution :
Component & Syst. Dev. Div.: RD, Real Test Co., Hsinchu, Taiwan
Abstract :
A novel failure mechanism of the high-voltage (HV) product during the negative-current-triggered (NCT) latch-up test is found. From the failure analysis and simulation results, the failure is identified as the unexpected parasitic-bipolar transistors turn-on induced the regulator malfunction to result in the low-voltage (LV) component damage.
Keywords :
bipolar transistors; circuit reliability; circuit testing; failure analysis; flip-flops; logic simulation; logic testing; trigger circuits; HV; LV; NCT; failure analysis; failure mechanism; high-voltage product; internal circuit damage; low-voltage component damage; negative-current-triggered latch-up testing; regulator malfunction; unexpected parasitic-bipolar transistor turn-on; Bipolar transistors; Electrostatic discharges; Integrated circuits; Regulators; Resistors; Transistors; Voltage control;
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
DOI :
10.1109/IRPS.2013.6532069
