DocumentCode :
608254
Title :
Novel drain-less multi-gate pHEMT for electrostatic discharge (ESD) protection in GaAs technology
Author :
Qiang Cui ; Liou, Juin J.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Central Florida, Orlando, FL, USA
fYear :
2013
fDate :
14-18 April 2013
Abstract :
Electrostatic discharge (ESD) protection structures in GaAs HEMT technology are commonly constructed using either stacked Schottky diode or Single-Gate clamp. Dual-gate pHEMT clamp was also recently reported for its better ESD robustness performance. This paper further develops an improved ESD protection clamp based on a novel drainless, multi-gate pHEMT in 0.5um GaAs pHEMT technology. With similar layout area, the proposed ESD protection clamp can carry much higher current handling ability (5.2-A “It2”, roughly 7.8-kV HBM ESD level) than both the conventional single-gate pHEMT clamp and recently reported dual-gate pHEMT clamp under the human body model (HBM) stress.
Keywords :
III-V semiconductors; electrostatic discharge; gallium arsenide; high electron mobility transistors; ESD protection clamp; ESD robustness performance; GaAs; HBM stress; current handling ability; drainless multigate pHEMT; dual-gate pHEMT clamp; electrostatic discharge protection; gallium arsenide HEMT technology; human body model stress; improved ESD protection clamp; layout area; single-gate pHEMT clamp; size 0.5 mum; stacked Schottky diode; Clamps; Electrostatic discharges; Gallium arsenide; Logic gates; PHEMTs; Schottky diodes; ESD; GaAs; HEM; Human Body Model;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location :
Anaheim, CA
ISSN :
1541-7026
Print_ISBN :
978-1-4799-0112-8
Electronic_ISBN :
1541-7026
Type :
conf
DOI :
10.1109/IRPS.2013.6532073
Filename :
6532073
Link To Document :
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