DocumentCode
608265
Title
Failure recovery mechanism caused by secondary defect
Author
Karki, Suman ; Nguyen, Donald
Author_Institution
DDAO, Texas Instrum. Inc., Dallas, TX, USA
fYear
2013
fDate
14-18 April 2013
Abstract
This paper addresses how an observed secondary defect could be induced during the failure analysis and caused the original failure mode to be recovered. Two cases studies will be presented with the systematic approach of Failure analysis and successful attempt of finding the original failure defect while extrapolating the data at the time of failure recovery. Understanding the working of the circuitry in question is necessary to trace the original failure.
Keywords
extrapolation; failure analysis; integrated circuit reliability; circuitry; data extrapolation; failure analysis; failure recovery mechanism; secondary defect; Capacitors; Circuit faults; Contacts; Failure analysis; Resistors; Scanning electron microscopy; Circuitry Analysis; Current Leakage; Current Mirrors; FIB Probe Pads; Fault Isolation; IC Failure Analysis; Micro-Probing; Mixed Signals; Nodal Probing; Original defect; Secondary defect; VREF circuitry;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2013 IEEE International
Conference_Location
Anaheim, CA
ISSN
1541-7026
Print_ISBN
978-1-4799-0112-8
Electronic_ISBN
1541-7026
Type
conf
DOI
10.1109/IRPS.2013.6532084
Filename
6532084
Link To Document