The physical insights into an abnormal erratic behavior in the resistance random access memory

Author

Huang, Y.J. ; Chung, Steve S. ; Lee, H.Y. ; Chen, Y.S. ; Chen, F.T. ; Gu, P.Y. ; Tsai, M.-J.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2013

fDate

14-18 April 2013

Abstract

The voltage ramping rate during the forming and set-reset process is strongly related to the formation of soft-breakdown (SBD) paths. In this paper, we examined the effect of two different operation methods in RRAM, including sweep and pulse modes. The RTN analysis has been utilized to examine their influences on the SBD paths. For the first time, we found a different behavior of the RTN currents generated by two different modes of operation. Results show that more SBD paths are created during the pulse mode which led to the instability of switched resistance, and induced the erratic bit during the readout of RRAM.

Keywords

electric breakdown; random-access storage; RRAM; RTN analysis; SBD path; abnormal erratic behavior; erratic bit; pulse mode; random telegraph noise; resistance random access memory; soft-breakdown path; sweep mode; switched resistance; voltage ramping rate; Current measurement; Dielectrics; Electron traps; Hafnium compounds; Noise; Resistance; Switches; Multi-level Operation; RRAM; Random Telegraph Noise; Resistive Switching Mechanism; Soft-breakdown;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2013 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4799-0112-8

Electronic_ISBN

1541-7026

Type

conf

DOI

10.1109/IRPS.2013.6532094

Filename

6532094